كتاب Springer Handbook of Crystal Growth By Govindhan Dhanaraj
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 كتاب Springer Handbook of Crystal Growth By Govindhan Dhanaraj

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مُساهمةموضوع: كتاب Springer Handbook of Crystal Growth By Govindhan Dhanaraj   الخميس 29 مايو 2014, 2:13 pm

أخوانى فى الله
أحضرت لكم كتاب
Springer Handbook of Crystal Growth
By Govindhan Dhanaraj, Kullaiah Byrappa,
Vishwanath Prasad, Michael Dudley


ويتناول الموضوعات الأتية :

Part A Fundamentals of Crystal Growth and Defect Formation
1 Crystal Growth Techniques and Characterization: An Overview
Govindhan Dhanaraj, Kullaiah Byrappa, Vishwanath (Vish) Prasad,
Michael Dudley 3
11 Historical Developments 3
12 Theories of Crystal Growth 4
13 Crystal Growth Techniques 6
14 Crystal Defects and Characterization 11
References 15
2 Nucleation at Surfaces
Ivan V Markov 17
21 Equilibrium Crystal–Ambient Phase 18
22 Work for Nucleus Formation 24
23 Rate of Nucleation 28
24 Saturation Nucleus Density 35
25 Second-Layer Nucleation in Homoepitaxy 38
26 Mechanism of Clustering in Heteroepitaxy 43
27 Effect of Surfactants on Nucleation 45
28 Conclusions and Outlook 48
References 48
3 Morphology of Crystals Grown from Solutions
Francesco Abbona, Dino Aquilano 53
31 Equilibrium Shape 55
32 The Theoretical Growth Shape 64
33 Factors Influencing the Crystal Habit 71
34 Surface Structure 72
35 Crystal Defects 73
36 Supersaturation – Growth Kinetics 73
37 Solvent 75
38 Impurities 78
39 Other Factors 84
310 Evolution of Crystal Habit 85
311 A Short Conclusion 86
3A Appendix 86
References 87
XVIII Contents
4 Generation and Propagation of Defects During Crystal Growth
Helmut Klapper 93
41 Overview 94
42 Inclusions 95
43 Striations and Growth Sectors 101
44 Dislocations 107
45 Twinning 120
46 Perfection of Crystals Grown Rapidly from Solution 125
References 127
5 Single Crystals Grown Under Unconstrained Conditions
Ichiro Sunagawa 133
51 Background 134
52 Smooth and Rough Interfaces: Growth Mechanism and Morphology 136
53 Surface Microtopography 139
54 Growth Forms of Polyhedral Crystals 143
55 Internal Morphology 146
56 Perfection of Single Crystals 152
References 156
6 Defect Formation During Crystal Growth from the Melt
Peter Rudolph 159
61 Overview 159
62 Point Defects 163
63 Dislocations 176
64 Second-Phase Particles 188
65 Faceting 191
66 Twinning 193
67 Summary 194
References 195
Part B Crystal Growth from Melt Techniques
7 Indium Phosphide: Crystal Growth and Defect Control
by Applying Steady Magnetic Fields
David F Bliss 205
71 Historical Overview 205
72 Magnetic Liquid-Encapsulated Growth 206
73 Magnetic Field Interactions with the Melt 209
74 Dislocation Density 216
75 Magnetic Field Effects on Impurity Segregation 220
76 Optical Characterization of InP:Fe 224
77 Summary 226
References 227
Contents XIX
8 Czochralski Silicon Single Crystals for Semiconductor
and Solar Cell Applications
Koichi Kakimoto 231
81 Silicon Single Crystals for LSIs and Solar Applications 232
82 Control of Crystal Defects in Czochralski Silicon 237
83 Growth and Characterization of Silicon Multicrystal
for Solar Cell Applications 239
84 Summary 240
References 241
9 Czochralski Growth of Oxide Photorefractive Crystals
Ernesto Diéguez, Jose Luis Plaza, Mohan D Aggarwal, Ashok K Batra 245
91 Background 246
92 Crystal Growth 246
93 Design and Development of Czochralski Growth System 247
94 Growth of Lithium Niobate Crystals and Its Characteristics 252
95 Other Oxide Photorefractive Crystals 262
96 Growth of Sillenite Crystals and Its Characteristics 264
97 Conclusions 273
References 273
10Bulk Crystal Growth of Ternary III–V Semiconductors
Partha S Dutta 281
101 III–V Ternary Semiconductors 282
102 Need for Ternary Substrates 283
103 Criteria for Device-Grade Ternary Substrates 284
104 Introduction to Bridgman Crystal Growth Techniques 286
105 Overview of III–V Binary Crystal Growth Technologies 292
106 Phase Equilibria for Ternary Compounds 300
107 Alloy Segregation in Ternary Semiconductors 302
108 Crack Formation in Ternary Crystals 304
109 Single-Crystalline Ternary Seed Generation Processes 308
1010Solute Feeding Processes for Homogeneous Alloy Growth 311
1011Role of Melt–Solid Interface Shapes 318
1012Conclusion 321
References 321
11Growth and Characterization
of Antimony-Based Narrow-Bandgap III–V Semiconductor Crystals
for Infrared Detector Applications
Vijay K Dixit, Handady L Bhat 327
111 Importance of Antimony-Based Semiconductors 329
112 Phase Diagrams 330
113 Crystal Structure and Bonding 331
114 Material Synthesis and Purification 333
XX Contents
115 Bulk Growth of InSb 334
116 Structural Properties of InSb, InAsxSb1−x,andInBixSb1−x  340
117 Physical Properties of InSb, InAsxSb1−x,andInBixSb1−x 346
118 Applications 357
119 Concluding Remarks and Future Outlook 359
References 360
12Crystal Growth of Oxides by Optical Floating Zone Technique
Hanna A Dabkowska, Antoni B Dabkowski 367
121 Historical Notes 367
122 Optical Floating Zone Technique – Application for Oxides 368
123 Optical Floating Zone
and Traveling Solvent Crystal Growth Techniques 369
124 Advantages and Limitations of the Floating Zone Techniques 370
125 Optical Floating Zone Furnaces 371
126 Experimental Details of Ceramics and Rod Preparation for OFZT 372
127 Stable Growth of Congruently and Incongruently Melting Oxides 373
128 Constitutional Supercooling and Crystallization Front Stability 375
129 Crystal Growth Termination and Cooling 377
1210Characterization of Crystals Grown by the OFZ Technique 377
1211Determination of Defects in Crystals – The Experimental Approach 380
1212Details of Conditions for Growth of Selected Oxide Single Crystals
by OFZ and TSFZ Methods 383
1213Conclusions 386
References 386
13Laser-Heated Pedestal Growth of Oxide Fibers
Marcello RB Andreeta, Antonio Carlos Hernandes 393
131 Fiber-Pulling Research 394
132 The Laser-Heated Pedestal Growth Technique 399
133 Fundamentals 402
134 Fiber Growth Aspects 409
135 Conclusions 418
References 419
14Synthesis of Refractory Materials by Skull Melting Technique
Vyacheslav V Osiko, Mikhail A Borik, Elena E Lomonova 433
141 Overview 433
142 Techniques for Growth of Single Crystals in a Cold Crucible 435
143 Growth of Single Crystals Based on Zirconium Dioxide 443
144 Glass Synthesis by Skull Melting in a Cold Crucible 465
145 Conclusion 469
References 469
Contents XXI
15Crystal Growth of Laser Host Fluorides and Oxides
Hongjun Li, Jun Xu 479
151 Crystal Growth of Laser Fluorides and Oxides from Melt 479
152 Laser Crystal Defects 487
153 Crystal Growth Techniques Characterization 501
References 503
16Shaped Crystal Growth
Vitali A Tatartchenko 509
161 Definitions and Scope of Discussion: SCG by CST 510
162 DSC – Basis of SCG by CST 512
163 SA and SCG by CZT 517
164 SA and SCG by VT 519
165 SA and SCG by FZT 522
166 TPS Capillary Shaping 522
167 TPS Sapphire Growth 539
168 TPS Silicon Growth 546
169 TPS Metals Growth 551
1610TPS Peculiarities 552
References 552
Part C Solution Growth of Crystals
17Bulk Single Crystals Grown from Solution on Earth
and in Microgravity
Mohan D Aggarwal, Ashok K Batra, Ravindra B Lal, Benjamin G Penn,
Donald O Frazier 559
171 Crystallization: Nucleation and Growth Kinetics 561
172 Low-Temperature Solution Growth 566
173 Solution Growth by Temperature Lowering 567
174 Triglycine Sulfate Crystal Growth: A Case Study 574
175 Solution Growth of Triglycine Sulfate Crystals in Microgravity 582
176 Protein Crystal Growth 592
177 Concluding Remarks 594
References 594
18Hydrothermal Growth of Polyscale Crystals
Kullaiah Byrappa 599
181 History of Hydrothermal Growth of Crystals 603
182 Thermodynamic Basis of the Hydrothermal Growth of Crystals 606
183 Apparatus Used in the Hydrothermal Growth of Crystals 615
184 Hydrothermal Growth of Some Selected Crystals 620
185 Hydrothermal Growth of Fine Crystals 634
XXII Contents
186 Hydrothermal Growth of Nanocrystals 637
187 Concluding Remarks 640
18A Appendix 641
References 646
19Hydrothermal and Ammonothermal Growth of ZnO and GaN
Michael J Callahan, Qi-Sheng Chen 655
191 Overview of Hydrothermal and Ammonothermal Growth
of Large Crystals 657
192 Requirements for Growth of Large, Low-Defect Crystals 661
193 Physical and Mathematical Models 666
194 Process Simulations 669
195 Hydrothermal Growth of ZnO Crystals 674
196 Ammonothermal GaN 681
197 Conclusion 685
References 685
20Stoichiometry and Domain Structure
of KTP-Type Nonlinear Optical Crystals
Michael Roth 691
201 Background 691
202 Stoichiometry and Ferroelectric Phase Transitions 697
203 Growth-Induced Ferroelectric Domains 703
204 Artificial Domain Structures 708
205 Nonlinear Optical Crystals 713
References 716
21High-Temperature Solution Growth:
Application to Laser and Nonlinear Optical Crystals
Joan J Carvajal, Maria Cinta Pujol, Francesc Díaz 725
211 Basics 726
212 High-Temperature Solution Growth 731
213 Growth of Bulk Laser and NLO Single Crystals by the TSSG Method 736
214 Liquid-Phase Epitaxy:
Growth of Epitaxial Films of Laser and NLO Materials 746
References 752
22Growth and Characterization of KDP and Its Analogs
Sheng-Lai Wang, Xun Sun, Xu-Tang Tao 759
221 Background 759
222 Mechanism and Kinetics of Crystallization 761
223 Growth Techniques for Single Crystals 769
224 Effect of Growth Conditions on Defects of Crystals 776
225 Investigations on Crystal Quality  783
References 789
Contents XXIII
Part D Crystal Growth from Vapor
23Growth and Characterization of Silicon Carbide Crystals
Govindhan Dhanaraj, Balaji Raghothamachar, Michael Dudley 797
231 Silicon Carbide – Background and History 797
232 Vapor Growth 799
233 High-Temperature Solution Growth 801
234 Industrial Bulk Growth by Seed Sublimation 802
235 Structural Defects and Their Configurations 805
236 Concluding Remarks 816
References 817
24AlN Bulk Crystal Growth by Physical Vapor Transport
Rafael Dalmau, Zlatko Sitar 821
241 PVT Crystal Growth 822
242 High-Temperature Materials Compatibility 825
243 Self-Seeded Growth of AlN Bulk Crystals 827
244 Seeded Growth of AlN Bulk Crystals 829
245 Characterization of High-Quality Bulk Crystals 832
246 Conclusions and Outlook 839
References 839
25Growth of Single-Crystal Organic Semiconductors
Christian Kloc, Theo Siegrist, Jens Pflaum 845
251 Basics 845
252 Theory of Nucleation and Crystal Growth 847
253 Organic Materials of Interest for Semiconducting Single Crystals 848
254 Pregrowth Purification 850
255 Crystal Growth 854
256 Quality of Organic Semiconducting Single Crystals 862
257 Organic Single-Crystalline Field-Effect Transistors 863
258 Conclusions 864
References 865
26Growth of III-Nitrides with Halide Vapor Phase Epitaxy (HVPE)
Carl Hemmingsson, Bo Monemar, Yoshinao Kumagai, Akinori Koukitu 869
261 Growth Chemistry and Thermodynamics 869
262 HVPE Growth Equipment 872
263 Substrates and Templates for Bulk GaN Growth 875
264 Substrate Removal Techniques 879
265 Doping Techniques for GaN in HVPE 882
266 Defect Densities, Dislocations, and Residual Impurities 883
267 Some Important Properties of HVPE-Grown Bulk GaN Material 887
268 Growth of AlN by HVPE: Some Preliminary Results 888
269 Growth of InN by HVPE: Some Preliminary Results 890
References 891
XXIV Contents
27Growth of Semiconductor Single Crystals from Vapor Phase
Ramasamy Dhanasekaran 897
271 Classifications of Vapor Growth 899
272 Chemical Vapor Transport – Transport Kinetics 901
273 Thermodynamic Considerations 905
274 Growth of II–VI Compound Semiconductors by CVT 912
275 Growth of Nanomaterial from Vapor Phase 916
276 Growth of I–III–VI2 Compounds 917
277 Growth of GaN by VPE 925
278 Conclusion 929
References 930
Part E Epitaxial Growth and Thin Films
28Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition
Ishwara B Bhat 939
281 Polytypes of Silicon Carbide 941
282 Defects in SiC 942
283 Epitaxial Growth of Silicon Carbide 944
284 Epitaxial Growth on Patterned Substrates 952
285 Conclusions 961
References 961
29Liquid-Phase Electroepitaxy of Semiconductors
Sadik Dost 967
291 Background 967
292 Early Theoretical and Modeling Studies 971
293 Two-Dimensional Continuum Models 977
294 LPEE Growth Under a Stationary Magnetic Field 978
295 Three-Dimensional Simulations 981
296 High Growth Rates in LPEE: Electromagnetic Mobility 992
References 996
30Epitaxial Lateral Overgrowth of Semiconductors
Zbigniew R Zytkiewicz 999
301 Overview 1000
302 Mechanism of Epitaxial Lateral Overgrowth from the Liquid Phase 1002
303 Dislocations in ELO Layers 1011
304 Strain in ELO Layers 1016
305 Recent Progress in Lateral Overgrowth of Semiconductor Structures 1026
306 Concluding Remarks 1034
References 1035
Contents XXV
31Liquid-Phase Epitaxy of Advanced Materials
Christine F Klemenz Rivenbark 1041
311 Historical Development of LPE 1042
312 Fundamentals of LPE and Solution Growth 1042
313 Requirements for Liquid-Phase Epitaxy 1044
314 Developing New Materials:
On the Choice of the Epitaxial Deposition Method 1044
315 LPE of High-Temperature Superconductors 1046
316 LPE of Calcium Gallium Germanates 1055
317 Liquid-Phase Epitaxy of Nitrides 1059
318 Conclusions 1063
References 1064
32Molecular-Beam Epitaxial Growth of HgCdTe
James W Garland, Sivalingam Sivananthan 1069
321 Overview 1070
322 Theory of MBE Growth 1073
323 Substrate Materials 1076
324 Design of the Growth Hardware 1088
325 In situ Characterization Tools
for Monitoring and Controlling the Growth 1090
326 Nucleation and Growth Procedure 1101
327 Dopants and Dopant Activation 1104
328 Properties of HgCdTe Epilayers Grown by MBE 1107
329 HgTe/CdTe Superlattices 1112
3210Architectures of Advanced IR Detectors 1115
3211IR Focal-Plane Arrays (FPAs) 1118
3212Conclusions 1119
References 1121
33Metalorganic Vapor-Phase Epitaxy
of Diluted Nitrides and Arsenide Quantum Dots
Udo W Pohl 1133
331 Principle of MOVPE 1133
332 Diluted Nitride InGaAsN Quantum Wells 1137
333 InAs/GaAs Quantum Dots 1142
334 Concluding Remarks 1148
References 1148
34Formation of SiGe Heterostructures and Their Properties
Yasuhiro Shiraki, Akira Sakai 1153
341 Background 1153
342 Band Structures of Si/Ge Heterostructures 1154
343 Growth Technologies 1156
344 Surface Segregation 1157
345 Critical Thickness 1161
346 Mechanism of Strain Relaxation 1163
XXVI Contents
347 Formation of Relaxed SiGe Layers 1165
348 Formation of Quantum Wells, Superlattices, and Quantum Wires 1173
349 Dot Formation 1177
3410Concluding Remarks and Future Prospects 1184
References 1184
35Plasma Energetics in Pulsed Laser and Pulsed Electron Deposition
Mikhail D Strikovski, Jeonggoo Kim, Solomon H Kolagani 1193
351 EnergeticCondensationinThinFilmDeposition 1193
352 PLD and PED Techniques 1194
353 Transformations of Atomic Energy in PLD and PED 1195
354 Optimization of Plasma Flux for Film Growth 1204
355 Conclusions 1208
References 1209
Part F Modeling in Crystal Growth and Defects
36Convection and Control in Melt Growth of Bulk Crystals
Chung-Wen Lan 1215
361 Physical Laws for Transport Processes 1217
362 Flow Structures in the Melt 1219
363 Flow Control by External Forces 1228
364 Outlook 1238
References 1238
37Vapor Growth of III Nitrides
Dang Cai, Lili Zheng, Hui Zhang 1243
371 Overview of Vapor Growth of III Nitrides 1244
372 Mathematical Models for AlN/GaN Vapor Deposition 1248
373 Characteristics of AlN/GaN Vapor Deposition 1251
374 Modeling of GaN IVPE Growth – A Case Study 1258
375 Surface Evolution of GaN/AlN Film Growth from Vapor 1274
376 Concluding Remarks 1275
References 1276
38Continuum-Scale Quantitative Defect Dynamics
in Growing Czochralski Silicon Crystals
Milind S Kulkarni 1281
381 The Discovery of Microdefects 1283
382 Defect Dynamics in the Absence of Impurities 1284
383 Czochralski Defect Dynamics in the Presence of Oxygen 1304
384 Czochralski Defect Dynamics in the Presence of Nitrogen 1313
385 The Lateral Incorporation of Vacancies in Czochralski Silicon Crystals 1321
386 Conclusions 1328
References 1332
Contents XXVII
39Models for Stress and Dislocation Generation
in Melt Based Compound Crystal Growth
Vishwanath (Vish) Prasad, Srinivas Pendurti 1335
391 Overview 1335
392 Crystal Growth Processes 1336
393 Dislocations in Semiconductors Materials 1337
394 Models for Dislocation Generation 1339
395 Diamond Structure of the Crystal 1343
396 Deformation Behavior of Semiconductors 1346
397 Application of the Haasen Model to Crystal Growth 1350
398 An Alternative Model 1351
399 Model Summary and Numerical Implementation 1360
3910Numerical Results 1362
3911Summary 1374
References 1375
40Mass and Heat Transport in BS and EFG Systems
Thomas F George, Stefan Balint, Liliana Braescu 1379
401 Model-Based Prediction of the Impurity Distribution –
Vertical BS System 1380
402 Model-Based Prediction of the Impurity Distribution – EFG System 1389
References 1400
Part G Defects Characterization and Techniques
41Crystalline Layer Structures with X-Ray Diffractometry
Paul F Fewster 1405
411 X-Ray Diffractometry 1406
412 Basic Direct X-Ray Diffraction Analysis from Layered Structures 1407
413 Instrumental and Theoretical Considerations 1412
414 Examples of Analysis from Low to High Complexity 1413
415 Rapid Analysis 1419
416 Wafer Micromapping 1420
417 The Future 1421
References 1422
42X-Ray Topography Techniques for Defect Characterization
of Crystals
Balaji Raghothamachar, Michael Dudley, Govindhan Dhanaraj 1425
421 Basic Principles of X-Ray Topography 1426
422 Historical Development of the X-Ray Topography Technique 1428
423 X-Ray Topography Techniques and Geometry 1430
424 Theoretical Background for X-Ray Topography 1435
425 Mechanisms for Contrast on X-Ray Topographs 1440
XXVIII Contents
426 Analysis of Defects on X-Ray Topographs 1445
427 Current Application Status and Development 1449
References 1450
43Defect-Selective Etching of Semiconductors
Jan L Weyher, John J Kelly 1453
431 Wet Etching of Semiconductors: Mechanisms 1454
432 Wet Etching of Semiconductors: Morphology and Defect Selectivity 1459
433 Defect-Selective Etching Methods 1461
References 1473
44Transmission Electron Microscopy Characterization of Crystals
Jie Bai, Shixin Wang, Lu-Min Wang, Michael Dudley 1477
441 Theoretical Basis of TEM Characterization of Defects 1477
442 Selected Examples of Application of TEM to Semiconductor Systems 1493
443 Concluding Remarks: Current Application Status and Development 1514
References 1515
45Electron Paramagnetic Resonance Characterization
of Point Defects
Mary E Zvanut 1521
451 Electronic Paramagnetic Resonance 1522
452 EPR Analysis 1524
453 Scope of EPR Technique 1534
454 Supplementary Instrumentation and Supportive Techniques 1538
455 Summary and Final Thoughts 1545
References 1546
46Defect Characterization in Semiconductors
with Positron Annihilation Spectroscopy
Filip Tuomisto 1551
461 Positron Annihilation Spectroscopy 1552
462 Identification of Point Defects and Their Charge States 1560
463 Defects, Doping, and Electrical Compensation 1565
464 Point Defects and Growth Conditions 1569
465 Summary 1576
References 1576
Part H Special Topics in Crystal Growth
47Protein Crystal Growth Methods
Andrea E Gutiérrez-Quezada, Roberto Arreguín-Espinosa, Abel Moreno 1583
471 Properties of Biomacromolecular Solutions 1584
472 Transport Phenomena and Crystallization 1587
473 Classic Methods of Crystal Growth 1587
474 Protein Crystallization by Diffusion-Controlled Methods 1588
Contents XXIX
475 New Trends in Crystal Growth (Crystal Quality Enhancement) 1591
476 2-D Characterization via Atomic Force Microscopy (Case Study) 1595
477 3-D Characterization via X-Ray Diffraction and Related Methods 1598
References 1599
48Crystallization from Gels
S Narayana Kalkura, Subramanian Natarajan 1607
481 Gel Growth in Crystal Deposition Diseases 1608
482 Experimental Methods 1609
483 Pattern Formation in Gel Systems 1610
484 Crystals Grown Using Gel Technique 1611
485 Application in Crystal Deposition Diseases 1614
486 Crystal-Deposition-Related Diseases 1616
487 Calcium Oxalate 1617
488 Calcium Phosphates 1619
489 Hydroxyapatite (HAP) 1620
4810Dicalcium Phosphate Dihydrate (DCPD) 1620
4811Calcium Sulfate 1623
4812Uric Acid and Monosodium Urate Monohydrate 1623
4813L-Cystine 1624
4814L-Tyrosine, Hippuric Acid, and Ciprofloxacin 1625
4815Atherosclerosis and Gallstones 1625
4816Crystallization of Hormones: Progesterone and Testosterone 1628
4817Pancreatitis 1628
4818Conclusions 1629
References 1630
49Crystal Growth and Ion Exchange in Titanium Silicates
Aaron J Celestian, John B Parise, Abraham Clearfield 1637
491 X-Ray Methods 1637
492 Equipment for Time-Resolved Experiments 1642
493 Detectors 1642
494 Software 1644
495 Types of In Situ Cells 1645
496 In-Situ Studies of Titanium Silicates (Na-TS) with Sitinakite
Topology 1649
497 Discussion of In Situ Studies 1658
498 Summary 1660
References 1660
50Single-Crystal Scintillation Materials
Martin Nikl, Anna Vedda, Valentin V Laguta 1663
501 Background 1663
502 Scintillation Materials 1670
503 Future Prospects 1689
504 Conclusions 1691
References 1691
XXX Contents
51Silicon Solar Cells: Materials, Devices, and Manufacturing
Mohan Narayanan, Ted Ciszek 1701
511 Silicon Photovoltaics 1701
512 Crystal Growth Technologies for Silicon Photovoltaics 1704
513 Cell Fabrication Technologies 1711
514 Summary and Discussion 1715
References 1716
52Wafer Manufacturing and Slicing Using Wiresaw
Imin Kao, Chunhui Chung, Roosevelt Moreno Rodriguez 1719
521 From Crystal Ingots to Prime Wafers 1721
522 Slicing: The First Postgrowth Process in Wafer Manufacturing 1726
523 Modern Wiresaw in Wafer Slicing 1730
524 Conclusions and Further Reading 1733
References 1733
Acknowledgements 1737
About the Authors 1741
Detailed Contents 1759
Subject Index


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مُساهمةموضوع: رد: كتاب Springer Handbook of Crystal Growth By Govindhan Dhanaraj   الجمعة 08 أغسطس 2014, 5:17 pm

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مُساهمةموضوع: رد: كتاب Springer Handbook of Crystal Growth By Govindhan Dhanaraj   السبت 09 أغسطس 2014, 2:48 am

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كتاب Springer Handbook of Crystal Growth By Govindhan Dhanaraj

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